Rounded vertical wafer vessel rods

ABSTRACT

In an embodiment, a system includes: a base; and a rod set comprising multiple rods connected to the base, wherein each rod of the rod set comprises multiple fingers disposed in a vertically-stacked relationship to each other and separated respectively from each other by respective slots, wherein each slot is configured to receive a bevel of a wafer, and wherein each of the multiple fingers comprises a rounded end at a furthest extension.

BACKGROUND

With advances of electronic products, semiconductor technology has beenwidely applied in manufacturing memories, central processing units(CPUs), liquid crystal displays (LCDs), light emission diodes (LEDs),laser diodes and other devices or chip sets. In order to achievehigh-integration and high-speed requirements, dimensions ofsemiconductor integrated circuits have been reduced and variousmaterials and techniques have been proposed to achieve theserequirements and overcome obstacles during manufacturing. Controllingthe conditions of processing wafers within chambers is an important partof semiconductor fabrication technology.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that various features are not necessarily drawn to scale. In fact,the dimensions and geometries of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 is a conceptual illustration of a vertical thermal reactionchamber in which wafers held by rounded vertical wafer vessel rods maybe processed, in accordance with some embodiments.

FIG. 2 illustrates a plan cross sectional view of the rod across a crosssection, in accordance with some embodiments.

FIG. 3 is a plan view of three fingers from respective rods in contactwith a wafer, in accordance with some embodiments.

FIG. 4A is a detailed perspective view of the rod, in accordance withsome embodiments.

FIG. 4B is a perspective view of the rods, in accordance with someembodiments.

FIG. 4C is a perspective view of the rods, in accordance with someembodiments.

FIG. 4D is a perspective view of the vertical wafer vessel, inaccordance with some embodiments.

FIG. 5 is a block diagram of a semiconductor furnace functional moduleof a semiconductor furnace, in accordance with some embodiments.

FIG. 6 is a flow chart of a semiconductor furnace process, in accordancewith some embodiments.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

The following disclosure describes various exemplary embodiments forimplementing different features of the subject matter. Specific examplesof components and arrangements are described below to simplify thepresent disclosure. These are, of course, merely examples and are notintended to be limiting. For example, it will be understood that when anelement is referred to as being “connected to” or “coupled to” anotherelement, it may be directly connected to or coupled to the otherelement, or one or more intervening elements may be present.

In addition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Systems and methods in accordance with various embodiments are directedto rounded vertical wafer vessel rods. In various embodiments, avertical wafer vessel may include a base that physically connects a rodset of multiple rods. Each rod of the rod set may include multiplefingers disposed in a vertically-stacked relationship to each other andseparated respectively from each other by respective slots. Each of theslots may be configured to receive a bevel of a wafer such that thevertical wafer vessel may be configured to secure multiple vessels in avertically-stacked relationship. Also, each of the multiple fingers mayinclude a rounded end at a furthest extension (e.g., extension from therest of the rod).

In various embodiments, each rod may include a rear rod portion that isfarthest from the wafers that the vertical wafer vessel is configured tohold, a middle rod portion adjacent the rear rod portion, an oblique rodportion adjacent to the middle rod portion, an oblique finger portion,and an end finger portion that is closest to the wafers that thevertical wafer vessel is configured to hold. Accordingly, the end fingerportion may be configured to contact the wafer. In various embodiments,the oblique finger portion may extend from the rounded end along astraight line. Also, the oblique rod portion may extend from the obliquefinger portion along that same straight line. In various embodiments,the oblique finger portion may be bound within two straight lines (e.g.,two lines) that are from about 80 degrees to about 40 degrees apart fromeach other, such as by being about 53 degrees apart from each other. Incertain embodiments, the base may comprise an opening and be shaped inan annular fashion (e.g., with a central opening). Also, in variousembodiments, the rod set may include three rods. Although certainembodiments may contemplate a rod set as including three rods, anynumber of rods may be included in a rod set as desired for differentapplications in various embodiments. For example, a rod set of avertical wafer vessel may include two rods in certain embodiments, fourrods in other embodiments, or five rods in yet further embodiments.

In various embodiments, the rear rod portion, the middle rod portion,the oblique rod portion, the oblique finger portion, and the end fingerportion may extend along a central axis. The end finger portion may beshorter along the central axis than the oblique finger portion. Also,the rear rod portion may be shorter along the central axis than theoblique finger portion.

In specific embodiments, the vertical wafer vessels may be configured tobe disposed and processed within a vertical thermal reaction chamber.The vertical thermal reaction chamber may be utilized in the context ofsemiconductor processing or fabrication steps such as oxidation,diffusion, doping, annealing, and chemical vapor deposition (CVD). Theseprocesses are typically performed at elevated temperatures within heatedcontrolled environments. CVD is a chemical vapor deposition process usedto produce or deposit thin films of material on the wafer includingwithout limitation metals, silicon dioxide, tungsten, silicon nitride,silicon oxynitride, and various dielectrics. The CVD process entailsplacing a wafer or plurality of wafers in a heated reaction chamber andintroducing one or more reactant gases into the chamber. The gasescontain various chemical precursors (e.g. SiH₂Cl₂ and NH₃ or silane andNH₃ to form a silicon nitride film) that react at the heated wafersurface to form a thin film of the desired semiconductor material andthickness thereon. The uniformity of the film deposited on the wafer byCVD is affected and controlled by regulating and attempting to optimizeCVD process parameters such as temperature of the wafer, reactionchamber pressure, flow path and rate of reactant gases, and depositiontime or duration.

Accordingly, a vertical thermal reaction chamber may be a type of heatedor thermal reaction chamber used in CVD processes. These verticalthermal reaction chambers are capable of holding a plurality ofvertically-stacked semiconductor wafers which undergo CVD batchprocessing simultaneously. The vertical thermal reaction chambers may beloaded with multiple wafers that in some embodiments are held in avertically-stackable rack referred to as a vertical wafer vessel, awafer ladder or boat. The vertical wafer vessel may include a frame(e.g., rods and a base) having multiple horizontal slots which each mayhold an individual wafer in spaced-apart, stacked vertical relationshipto the other wafers. In certain embodiments, the vertical wafer vesselsmay hold from approximately 50 to approximately 125 wafers. Verticalspace is provided between the wafers to allow the CVD reactant gases tocirculate therethrough for forming the desired material film deposits ontop of the wafers. In certain embodiments, the vertical thermal reactionchambers are cylindrical in shape (also referred to as reaction tubes)and generally have a closed top and open bottom portal to allow forinsertion of the vertical wafer vessels holding the vertical waferstacks.

The vertical thermal reaction chambers, vertical wafer vessels, andother components that may be exposed to the heat and corrosive gases arecommonly made of quartz or SiC to withstand CVD process temperaturesthat may range from about 200-1200 degrees centigrade (C). in someapplications depending on the type of semiconductor material film to bedeposited on the wafers.

The vertical wafer vessels may be disposed on an openable/closeable lidassembly which forms a bottom portal and platform for supporting thevertical wafer vessel. The lid assembly may be configured and adapted totemporarily attach to and seal the bottom portal of the reaction chamberto form a gas-tight temporary connection during CVD processing. The lidassembly may be mounted on a vertical elevator or lift which is operableto raise and lower the vertical wafer vessel into and from the reactionchamber. The reaction chamber and associated assembly may include a gasmanifold with gas inlets and gas outlets for introducing and removingCVD process reactant gases from the reaction chamber. In certainembodiments, a rotator (e.g., shaft or other rotating platform) mayrotating the vertical wafer vessel and wafers held therein when thevertical wafer vessel is positioned in the reaction chamber may beprovided to promote uniform gas flow and heating throughout the waferstack.

The vertical semiconductor furnace may include a heat source, which insome embodiments may include resistance type heaters, radiant typeheaters, or a combination thereof. Examples of resistance type heatersinclude electric resistive wire coil elements or similar. Some examplesof radiant type heaters include heating lamps or quartz-heatingelements. The heaters may be disposed outside but proximate to thequartz reaction chamber to heat the chamber and increase its internaltemperature.

FIG. 1 is a conceptual illustration of a vertical thermal reactionchamber 102 in which wafers held by rounded vertical wafer vessel rodsmay be processed, in accordance with some embodiments. In certainembodiments, the vertical thermal reaction chamber 102 may be part of asemiconductor furnace 104 that processes wafer sizes of 300 mm or less.As illustrated, there may be multiple heater zones 106 providedproximate the periphery (e.g., walls) of the vertical thermal reactionchamber 102. Each heater zone 106 may be defined by and includes aheater, which in some embodiments is an electric resistance type heatercoil or element. For example, heater zones 106 may be provided at thesidewall of reaction chamber, one top heater zone, and one bottom heaterzone. Electric or electronic heater controls may be provided to allowthe temperature output from each heater to be adjusted by varying theenergy input from an electrical power source.

The semiconductor furnace 104 may be a tool incorporating a CVD verticalthermal reaction chamber 102. Semiconductor furnace 104 may include aninsulated housing 108 (illustrated with dotted lines) which isconfigured and adapted to provide a thermal enclosure aroundsubstantially all of the vertical thermal reaction chamber 102 toestablish a temperature controlled environment for the vertical thermalreaction chamber 102. The CVD vertical thermal reaction chamber 102 mayinclude an internal cavity defining a space for removably receiving avertical wafer vessel 110 that is configured and adapted for supportingand holding a plurality of vertically-stacked wafers 112 as will bediscussed in further detail below. In one embodiment, vertical thermalreaction chamber 102 may have a closed top 114, sidewall 116, andopenable bottom portal 118 to allow the vertical wafer vessel 110 to beinserted and removed from the vertical thermal reaction chamber 102 forbatch processing of wafers 112. In one embodiment, the vertical wafervessel 110 comprises an open-frame structure such as a ladder orrod-type design having multiple horizontal slots for supporting thewafers 112 and allowing reactant gas to flow horizontally over the faceof the wafers 112 to build the desired material film thicknessesthereon. The vertical wafer vessel 110 may be sized to hold about 50 toabout 125 wafers 112 or more in some embodiments. However, any suitablenumber of wafers may be held by the vertical wafer vessel depending onthe height of the reaction chamber 102. In some representativeembodiments, typical vertical spacing of wafers 112 in vertical wafervessel 110 may be about 6 mm to about 10 mm. In certain embodiments, thevertical wafer vessel 110 may be made of quartz, SiC, or any othersuitable material for thermal operations.

The vertical thermal reaction chamber 102 may have a cylindrical shapein one embodiment and may be made of quartz or SiC. Also, the verticalthermal reaction chamber 102 may include a coating such as polysiliconor another coating material used depending on the type of processconducted in the chamber. The vertical thermal reaction chamber 102 mayhave any suitable height or length depending on the number of wafers tobe processed in each batch. In some exemplary embodiments, the verticalthermal reaction chamber 102 may have a representative vertical heightor length of 100-150 cm. However, any suitable height or length may beprovided. In some embodiments, the vertical thermal reaction chamber 102for processing 450 mm wafers may be sized to be more than 450 mmdiameter and a chamber length of about 50 to 200 cm depending on thenumber of wafers to be processed simultaneously in the chamber.

The openable bottom portal 118 may include a lid which may be sealed tothe openable bottom portal 118 of reaction chamber 102 to form agas-tight chamber seal for processing the wafers 112. In one embodiment,the openable bottom portal 118 may be further include a flange and lid.The openable bottom portal 118 may include a support structure toprovide support for vertical wafer vessel 110 which may be attached tothe lid.

A reaction gas supply connection inlet 120A and outlet 120B may befurnished to allow one or more process gases to be introduced andremoved from reaction chamber 102. The vertical thermal reaction chamber102 may also interface with various gas manifold and injectors, furnacecooling to allow quick changing of wafer batches, an external insulatedhousing enclosing the thermal reaction chamber 102, a vertical wafervessel elevator or lift and robotically-controlled arm for positioning,raising, and lowering the vertical wafer vessel 110 into/from thermalreaction chamber 102, may be included in certain embodiments.Furthermore, the vertical wafer vessel 110 may be located within thevertical thermal reaction chamber 102 on a motor drive mechanism (notshown) to allow the stack of wafers 112 to be rotated during the CVDprocess to promote uniform thickness of the layer of material depositedon the wafers. Additionally, the operation of the semiconductor furnace104 and batch processing of wafers 112 may be controlled by atemperature controller to regulate the heat output from the furnaceheating system including temperature ramp up and ramp down rates.

In various embodiments, a vertical wafer vessel 110 may include a base122 that physically connects a rod set of multiple rods 124A, 124B,124C. Each rod 124A, 124B, 124C of the rod set may include multiplefingers 123 disposed in a vertically-stacked relationship to each otherand separated respectively from each other by respective slots. Each ofthe slots may be configured to receive a bevel of a wafer 112 such thatthe vertical wafer vessel 110 may be configured to secure multiplewafers 112 in a vertically-stacked relationship. Also, each of themultiple fingers 123 may include a rounded end at a furthest extension(e.g., extension from the rest of the rod). In various embodiments, thevertical wafer vessel 110 may optionally include a top base 126(illustrated with dotted lines).

In various embodiments, the vertical waver vessel 110 may secure a waferusing contours or formations along the surface of the vertical wafervessel 110, such as the fingers 123 and/or slots between the fingers123. In certain embodiments, the fingers 123 be rounded, or greater than90 degrees between intersecting surfaces to prevent damage to thecorners of the vertical waver vessel 110 and damage to other objects(e.g., the wafer) from contact with the vertical waver vessel 110. Incertain embodiments, the vertical waver vessel 110 may be configured tohave all horizontal corners of the vertical waver vessel 110 be greaterthan 90 degrees between intersecting surfaces. In further embodiments,the vertical waver vessel 110 may have all horizontal corners (e.g.,corners as viewable in a horizontal cross section of a rod) be greaterthan 90 degrees between intersecting surfaces. The term “intersectingsurfaces” may refer to a surface of a generally uniform gradient orslope, and the term “corner” may refer to a transition between thesurfaces. The cross section A-A of FIG. 1 will be referenced furtherbelow to discuss further details of the fingers 123 along the rod 124A.

FIG. 2 illustrates a plan cross sectional view of the rod 124A acrosscross section A-A, in accordance with some embodiments. As noted above,the rod 124A may include a finger 123 with a rounded end 204 at afurthest extension (e.g., extension from the rest of the rod).

For ease of explanation, the rod 124A may be discussed with respect to acentral axis 206 that bisects the rod from the tip of the rounded end204. Along the direction of the central axis 206, the rod 124A mayinclude a rear rod portion 210, a middle rod portion 212 adjacent therear rod portion, an oblique rod portion 214 adjacent to the middle rodportion, an oblique finger portion 216, and an end finger portion 218.Accordingly, the end finger portion 218 (and part of the oblique fingerportion 216) may be configured to contact a wafer (e.g., a bevel of awafer). In various embodiments, the oblique finger portion 214 mayextend from the rounded end finger portion 218 along a straight line220A or 220B. Also, the oblique rod portion 214 may extend from theoblique finger portion 216 along that same straight line 220A or 220B.In various embodiments, the two straight lines may have an angularrelationship 226 from about 80 degrees to about 40 degrees apart fromeach other, such as by being about 53 degrees apart from each other.

In various embodiments, the end finger portion 218 may be shorter alongthe central axis than the oblique finger portion 216. The oblique fingerportion 216 may be longer than the oblique rod portion 214. The middlerod portion 212 may be longer than the oblique finger portion. Also, therear rod portion 210 may be shorter than the middle rod portion 212.

For ease of explanation, the rod 124A may be discussed with respect toan orthogonal axis 230 orthogonal to the central axis 206. The middlerod portion 212 may have a greatest distance along the orthogonal axis230 (e.g., middle rod portion width 232). Also, the shortest distancealong the orthogonal axis 230 for the rear rod portion 210 may be thesame as the longest distance along the orthogonal axis for the obliquefinger portion 216 (e.g., oblique finger portion width 234).

In various embodiments, the rod 124A may be without right angles in thetransitions between the rear rod portion 210 and the middle rod portion212, between the middle rod portion 212 and the oblique rod portion 214,between the oblique rod portion 214 and the oblique finger portion 216,and between the oblique finger portion 216 and the end finger portion218. For example, an internal angle 236A for a corner formed between theoblique rod portion 214 and the oblique finger portion may be greaterthan 90 degrees when measured as an angle internal to the rod. Also, aninternal angle 236B for a corner formed between the middle rod portion212 and the oblique rod portion 214 may be greater than 90 degrees whenmeasured as an angle internal to the rod. Also, an internal angle 236Cfor a corner formed between the rear rod portion 210 and the middle rodportion 212 may be greater than 90 degrees when measured as an angleinternal to the rod. Also, in certain embodiments, the end fingerportion 218 may be curved with a circular curvature. However, in otherembodiments, the end finger portion 218 may be curved with an ellipticalcurvature.

In various embodiments, the transitions between different portions(e.g., the rear rod portion 210, the middle rod portion 212, the obliquerod portion 214, the oblique finger portion 216, and the end fingerportion 218) may be greater than 90 degrees between intersectingsurfaces to prevent damage to the corners of the vertical waver vessel110 and damage to other objects (e.g., the wafer) from contact with thevertical waver vessel 110. In certain embodiments, the vertical wavervessel 110 may be configured to have all horizontal corners of thevertical waver vessel 110 be greater than 90 degrees betweenintersecting surfaces (e.g., in the transitions between the differentportions). In further embodiments, the vertical waver vessel 110 mayhave all horizontal corners (e.g., corners as viewable in a horizontalcross section of a rod, such as internal angles 236A, 236B, and 236C) begreater than 90 degrees between intersecting surfaces.

FIG. 3 is a plan view 300 of three fingers from respective rods 124A,124B, 124C in contact with a wafer 112, in accordance with someembodiments. The plan view 150 may also be along a plane of the line A-Areferenced above in FIG. 1. Returning to FIG. 3, each of the rods 124A,124B, 124C may include fingers 123. Each of the fingers 123 may beconfigured to contact a bevel of a wafer 112 such that a vertical wafervessel may be configured to the wafer. Also, the fingers 123 may includea rounded end at a furthest extension (e.g., extension from the rest ofthe rod 124A, 124B, 124C).

FIG. 4A is a detailed perspective view of the rod 124A, in accordancewith some embodiments. The rod 124A may include multiple fingersdisposed in a vertically-stacked relationship to each other andseparated respectively from each other by respective slots 402. Each ofthe slots 402 may be configured to receive a bevel of a wafer such thatthe vertical wafer vessel may be configured to secure multiple vesselsin a vertically-stacked relationship. Also, each of the multiple fingers123 may include a rounded end 204 at a furthest extension (e.g.,extension from the rest of the rod 124).

As noted above, the rod 124A may include a rear rod portion 210, amiddle rod portion 212 adjacent the rear rod portion, an oblique rodportion 214 adjacent to the middle rod portion, an oblique fingerportion 216, and an end finger portion 218. Accordingly, the end fingerportion 218 may be configured to contact a wafer (e.g., a bevel of awafer). In various embodiments, the oblique finger portion 214 mayextend from the rounded end finger portion 218 along the straight line220B. Also, the oblique rod portion 214 may extend from the obliquefinger portion 216 along that same straight line 220B.

FIG. 4B is a perspective view of the rods 124B and 124C, in accordancewith some embodiments. In various embodiments, the vertical wafer vessel110 may include a base that physically connects the rods 124B, 124C.Each rod 124B, 124C of the rod set may include multiple fingers 123disposed in a vertically-stacked relationship to each other andseparated respectively from each other by respective slots 402. Each ofthe slots 402 may be configured to receive a bevel 422 of a wafer 112such that the vertical wafer vessel 110 may be configured to securemultiple wafers 112 in a vertically-stacked relationship. Also, each ofthe multiple fingers 123 may include a rounded end at a furthestextension (e.g., extension from the rest of the rod).

In various embodiments, different rods 124B, 124C may have differentarrangements of fingers 123. For example, the rod 124C may have fewerfingers 123 than the rod 124B. More specifically, the rod 124C may havea slotless portion 431 in which there are no slots at a same verticalorientation (e.g., height or z axis) as that of the rod 124B.

FIG. 4C is a perspective view of the rods 124A, 124B and 124C, inaccordance with some embodiments. As noted above, each rod 124A, 124Band 124C of the rod set may include multiple fingers disposed in avertically-stacked relationship to each other and separated respectivelyfrom each other by respective slots. Each of the slots may be configuredto receive a bevel of a wafer 112 such that the vertical wafer vessel110 may be configured to secure multiple wafers 112 in avertically-stacked relationship. In various embodiments the three rods124A, 124B and 124C may be utilized to secure each wafer in threelocations at each of the rods 124A, 124B and 124C.

In various embodiments, the two rods 124A and 124C (also referred to asfront rods) may differ from the rod 124B (also referred to as a backrod). For example, in certain embodiments, the two rods 124A and 124Cmay have a modulus of section (e.g., total volume of a rod with afinger) of about 200 mm³ to about 300 mm³ (e.g., of about 264 mm³ incertain embodiments), a breakage force of about 20 kg to about 30 kg(e.g., of about 24 kg), a finger size (e.g., combined area of the endfinger portion 218 and oblique finger portion 216) of about 70 mm² toabout 80 mm² (e.g., of about 74 mm²) and a wafer contact area (e.g.,area of the finger configured to contact a wafer) of about 40 mm² toabout 50 mm² (e.g., of about 46 mm²). In particular embodiments, the rod124B may have a modulus of section (e.g., total volume of a rod with afinger) of about 300 mm³ to about 400 mm³ (e.g., of about 315 mm³ incertain embodiments), a breakage force of about 20 kg to about 30 kg(e.g., of about 28 kg), a finger size (e.g., combined area of the endfinger portion 218 and oblique finger portion 216) of about 60 mm² toabout 70 mm² (e.g., of about 61 mm²) and a wafer contact area (e.g.,area of the finger configured to contact a wafer) of about 20 mm² toabout 30 mm² (e.g., of about 29 mm²).

FIG. 4D is a perspective view of the vertical wafer vessel 110, inaccordance with some embodiments. As noted above, the vertical wafervessel 110 may include a base 122 that defines an end of the verticalwafer vessel 110 from which the rods 124A, 124B and 124C extend. Also,the base may comprise an opening and be shaped in an annular fashion(e.g., with a central opening). This central opening may be utilized toreduce the amount of material in the base and allow for faster heatingor cooling of the vertical wafer vessel 110. In various embodiments, thetop base 126 may also define an end of the vertical wafer vessel 110from which the rods 124A, 124B and 124C extend. In various embodiments,the top base 126 may include a slot 430 (e.g., to form a C shape) suchthat the top base 126 is not completely annular. This C shape may allowthe top base 126 to more effectively expand and contract due to thermalexpansion during operation of the semiconductor furnace that processesthe wafers loaded onto the vertical wafer vessel 110. Furthermore, thetop base 126 may include a flattened end 432 such that the top base 126is not entirely circular. This flattened end may be utilized to allowthe top base 126 to better fit within a particular semiconductorfurnace.

FIG. 5 is a block diagram of a semiconductor furnace functional moduleof 502 a semiconductor furnace, in accordance with some embodiments. Thesemiconductor furnace functional module 502 may be part of asemiconductor furnace. The semiconductor furnace functional module mayinclude a processor 504. In further embodiments, the processor 504 maybe implemented as one or more processors.

The processor 504 may be operatively connected to a computer readablestorage module 506 (e.g., a memory and/or data store), a controllermodule 508 (e.g., a controller), a user interface module 510 (e.g., auser interface), and a network connection module 512 (e.g., networkinterface). In some embodiments, the computer readable storage module506 may include semiconductor furnace logic that may configure theprocessor 504 to perform various processes discussed herein. Thecomputer readable storage may also store data, such as identifiers for awafer, identifiers for a semiconductor furnace, identifiers forparticular gas or plasma, and any other parameter or information thatmay be utilized to perform the various processes discussed herein.

The semiconductor furnace functional module 502 may include a controllermodule 508. The controller module 508 may be configured to controlvarious physical apparatuses that control movement or functionality fora semiconductor furnace, vertical thermal reaction chamber, verticalwafer vessel, and the like. For example, the controller module 508 maybe configured to control movement or functionality for at least one of arobotic arm that moves the vertical wafer vessel and/or individualwafer, an actuator for the semiconductor furnace or vertical thermalreaction chamber and the like. For example, the controller module 508may control a motor or actuator that may move or activate at least oneof a robotic arm, functionality of a semiconductor furnace, and/orfunctionality of a vertical thermal reaction chamber. The controller maybe controlled by the processor and may carry out aspects of the variousprocesses discussed herein.

The semiconductor furnace functional module 502 may also include theuser interface module 510. The user interface module may include anytype of interface for input and/or output to an operator of thesemiconductor furnace functional module 502, including, but not limitedto, a monitor, a laptop computer, a tablet, or a mobile device, etc.

The network connection module 512 may facilitate a network connection ofthe semiconductor furnace functional module 502 with various devicesand/or components of the semiconductor furnace functional module 502that may communicate (e.g., send signals, messages, instructions, ordata) within or external to the semiconductor furnace functional module502. In certain embodiments, the network connection module 512 mayfacilitate a physical connection, such as a line or a bus. In otherembodiments, the network connection module 512 may facilitate a wirelessconnection, such as over a wireless local area network (WLAN) by using atransmitter, receiver, and/or transceiver. For example, the networkconnection module 512 may facilitate a wireless or wired connection withthe processor 504, the computer readable storage 506, and the controller508.

FIG. 6 is a flow chart of a semiconductor furnace process 600, inaccordance with some embodiments. The semiconductor furnace process 600,may be performed using components of a semiconductor furnace, asintroduced above. It is noted that the process 600 is merely an example,and is not intended to limit the present disclosure. Accordingly, it isunderstood that additional operations may be provided before, during,and after the process 600 of FIG. 6, certain operations may be omitted,certain operations may be performed concurrently with other operations,and that some other operations may only be briefly described herein.

At operation 602, a wafer may be inserted into a vertical wafer vessel.The wafer may be part of a batch of wafers that may be inserted into thevertical wafer vessel to be secured in a vertically-stacked relationshipto each other (e.g., be disposed in a stack and vertically displacedrelative to each other). A vertical wafer vessel may be sized to holdany number of wafers, such as 50-125 wafers or more in some embodiments.However, any suitable number of wafers may be held by the vertical wafervessel depending on the height of a reaction chamber in which thevertical wafer vessel is configured to be housed. In some embodiments,vertical spacing of wafers in a vertical wafer vessel may be about 6 mmto about 10 mm. In certain embodiments, the vertical wafer vessel may bemade of quartz, SiC, or any other suitable material for thermaloperations.

In various embodiments, the handling of wafers to and from the slotswithin the vertical wafer vessel may be performed by a robotic handler(e.g., a robot or a robotic arm). The robotic handler may handle wafertransfers by a single, planar, two-axis, random access,cassette-to-cassette motion. The robotic handler may be composed ofsuitable material for thermal operations including, but not limited to,a ceramic (e.g., quartz), a metal (e.g., stainless steel), an aluminumalloy, or aluminum oxide.

In various embodiments, a vertical wafer vessel may include a base thatphysically connects a rod set of multiple rods. Each rod of the rod setmay include multiple fingers disposed in a vertically-stackedrelationship to each other and separated respectively from each other byrespective slots. Each of the slots may be configured to receive a bevelof a wafer such that the vertical wafer vessel may be configured tosecure multiple vessels in a vertically-stacked relationship. Also, eachof the multiple fingers may include a rounded end at a furthestextension (e.g., extension from the rest of the rod).

In various embodiments, each rod may include a rear rod portion that isfarthest from the wafers that the vertical wafer vessel is configured tohold, a middle rod portion adjacent the rear rod portion, an oblique rodportion adjacent to the middle rod portion, an oblique finger portion,and an end finger portion that is closest to the wafers that thevertical wafer vessel is configured to hold. Accordingly, the end fingerportion may be configured to contact the wafer. In various embodiments,the oblique finger portion may extend from the rounded end along astraight line. Also, the oblique rod portion may extend from the obliquefinger portion along that same straight line. In various embodiments,the oblique finger portion may be bound within two straight lines (e.g.,two lines) that are from about 80 degrees to about 40 degrees apart fromeach other, such as by being about 53 degrees apart from each other. Incertain embodiments, the base may comprise an opening and be shaped inan annular fashion (e.g., with a central opening). Also, in variousembodiments, the rod set may include three rods. Although certainembodiments may contemplate a rod set as including three rods, anynumber of rods may be included in a rod set as desired for differentapplications in various embodiments. For example, a rod set of avertical wafer vessel may include two rods in certain embodiments, fourrods in other embodiments, or five rods in yet further embodiments.

At operation 604, the vertical wafer vessel may be inserted into avertical thermal reaction chamber. In certain embodiments, the verticalwafer vessel may be placed on a vertical wafer vessel elevator or liftand robotically-controlled arm (e.g., robot or robotic arm) forpositioning and raising the vertical wafer vessel into the thermalreaction chamber via an openable bottom portal of the vertical thermalreaction chamber. The openable bottom portal may include a lid which maybe opened or closed to seal the openable bottom portal of the verticalthermal reaction chamber to form a gas-tight chamber seal for processingthe wafers.

In various embodiments, the vertical wafer vessels may be disposed on anopenable/closeable lid assembly which forms a bottom closure portal andplatform for supporting the vertical wafer vessel. The lid assembly maybe configured and adapted to temporarily attach to and seal the bottomportal of the reaction chamber to form a gas-tight temporary connectionduring processing. The lid assembly may be mounted on a verticalelevator or lift which is operable to raise the vertical wafer vesselinto the reaction chamber.

As introduced above, the vertical thermal reaction chamber may have acylindrical shape in one embodiment and may be made of quartz or SiC,The vertical thermal reaction chamber may have any suitable height orlength depending on the number of wafers to be processed in each batch(e.g., the size of the vertical wafer vessel and/or the desired numberof wafers to be processed in each batch or in one session of waferprocessing). In some exemplary embodiments, the vertical thermalreaction chamber may have a representative vertical height or length of100-150 cm. However, any suitable height or length may be provided. Insome representative embodiments, the vertical thermal reaction chamberfor processing 450 mm wafers may be sized to be more than 450 mmdiameter and a chamber length of about 50 to 200 cm depending on thenumber of wafers to be processed simultaneously in the chamber.

At operation 606, the wafers within the vertical wafer vessel may beprocessed within the vertical thermal reaction chamber. The verticalthermal reaction chamber may be utilized in the context of semiconductorprocessing or fabrication steps such as oxidation, diffusion, doping,annealing, and CVD. These processes are typically performed at elevatedtemperatures within heated controlled environments. For example, CVD isa chemical vapor deposition process used to produce or deposit thinfilms of material on the wafer including without limitation metals,silicon dioxide, tungsten, silicon nitride, silicon oxynitride, andvarious dielectrics. The CVD process entails placing a wafer orplurality of wafers in a heated reaction chamber and introducing one ormore reactant gases into the chamber. The gases contain with variouschemical precursors (e.g. SiH₂Cl₂ and NH₃ or silane and NH₃ to form asilicon nitride film) that react at the heated wafer surface to form athin film of the desired semiconductor material and thickness thereon.The uniformity of the film deposited on the wafer by CVD is affected andcontrolled by regulating and attempting to optimize CVD processparameters such as temperature of the wafer, reaction chamber pressure,flow path and rate of reactant gases, and deposition time or duration.

In various embodiments, the reaction chamber and associated assembly mayinclude a gas manifold with gas inlets and gas outlets for introducingand removing CVD process reactant gases from the reaction chamber. Incertain embodiments, a rotator (e.g., shaft or other rotating platform)may rotating the vertical wafer vessel and wafers held therein when thevertical wafer vessel is positioned in the reaction chamber may beprovided to promote uniform gas flow and heating throughout the waferstack.

At operation 608, the vertical wafer vessel may be removed from thevertical thermal reaction chamber. In certain embodiments, the verticalwafer vessel may on a vertical wafer vessel elevator or lift androbotically-controlled arm (e.g., robot or robotic arm) for positioning,and lowering the vertical wafer vessel from the thermal reaction chambervia the openable bottom portal of the vertical thermal reaction chamber.In various embodiments, the vertical wafer vessels may be disposed onthe openable/closeable lid assembly which forms a bottom portal andplatform for supporting the vertical wafer vessel. The lid assembly maybe configured and adapted to temporarily detach and unseal seal thebottom portal of the reaction chamber to release the vertical wafervessel. The lid assembly may be mounted on a vertical elevator or liftwhich is operable to lower the vertical wafer vessel from the reactionchamber.

At operation 610, the waver may be removed from the vertical wavervessel. In certain embodiments, the wafers may be removed from thevertical wafer vessel for further processing. In various embodiments,the handling of wafers to and from the slots within the vertical wafervessel may be performed by the robotic handler (e.g., robot or roboticarm). The robotic handler may handle wafer transfers by a single,planar, two-axis, random access, cassette-to-cassette motion.

In an embodiment, a system includes: a base; and a rod set comprisingmultiple rods connected to the base, wherein each rod of the rod setcomprises multiple fingers disposed in a vertically-stacked relationshipto each other and separated respectively from each other by respectiveslots, wherein each slot is configured to receive a bevel of a wafer,and wherein each of the multiple fingers comprises a rounded end at afurthest extension.

In another embodiment, a vertical wafer vessel includes: a base; and arod set comprising multiple rods connected to the base, wherein each rodof the rod set comprises: multiple fingers disposed in avertically-stacked relationship to each other and separated respectivelyfrom each other by respective slots, wherein each slot is configured toreceive a wafer, wherein each of the multiple fingers comprises arounded end at a furthest extension, and wherein each rod comprises arear rod portion that is farthest from the wafer, a middle rod portionadjacent the rear rod portion, an oblique rod portion adjacent to themiddle rod portion, an oblique finger portion, and an end finger portionthat comprises the multiple fingers.

In another embodiment, a method includes: inserting a wafer into avertical wafer vessel, wherein the vertical wafer vessel comprises: abase; and a rod set comprising multiple rods connected to the base,wherein each rod of the rod set comprises multiple fingers disposed in avertically-stacked relationship to each other and separated respectivelyfrom each other by respective slots, wherein each slot is configured toreceive a wafer bevel, and wherein each of the multiple fingerscomprises a rounded end at a furthest extension; inserting the verticalwafer vessel into a vertical thermal reaction chamber; and heating thevertical wafer vessel within the vertical thermal reaction chamber.

The foregoing outlines features of several embodiments so that thoseordinary skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art should also realize thatsuch equivalent constructions do not depart from the spirit and scope ofthe present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

In this document, the term “module” as used herein, refers to software,firmware, hardware, and any combination of these elements for performingthe associated functions described herein. Additionally, for purpose ofdiscussion, the various modules are described as discrete modules;however, as would be apparent to one of ordinary skill in the art, twoor more modules may be combined to form a single module that performsthe associated functions according embodiments of the invention.

A person of ordinary skill in the art would further appreciate that anyof the various illustrative logical blocks, modules, processors, means,circuits, methods and functions described in connection with the aspectsdisclosed herein can be implemented by electronic hardware (e.g., adigital implementation, an analog implementation, or a combination ofthe two), firmware, various forms of program or design codeincorporating instructions (which can be referred to herein, forconvenience, as “software” or a “software module”), or any combinationof these techniques. To clearly illustrate this interchangeability ofhardware, firmware and software, various illustrative components,blocks, modules, circuits, and steps have been described above generallyin terms of their functionality. Whether such functionality isimplemented as hardware, firmware or software, or a combination of thesetechniques, depends upon the particular application and designconstraints imposed on the overall system. Skilled artisans canimplement the described functionality in various ways for eachparticular application, but such implementation decisions do not cause adeparture from the scope of the present disclosure.

Furthermore, a person of ordinary skill in the art would understand thatvarious illustrative logical blocks, modules, devices, components andcircuits described herein can be implemented within or performed by anintegrated circuit (IC) that can include a general purpose processor, adigital signal processor (DSP), an application specific integratedcircuit (ASIC), a field programmable gate array (FPGA) or otherprogrammable logic device, or any combination thereof. The logicalblocks, modules, and circuits can further include antennas and/ortransceivers to communicate with various components within the networkor within the device. A general purpose processor can be amicroprocessor, but in the alternative, the processor can be anyconventional processor, controller, or state machine. A processor canalso be implemented as a combination of computing devices, e.g., acombination of a DSP and a microprocessor, a plurality ofmicroprocessors, one or more microprocessors in conjunction with a DSPcore, or any other suitable configuration to perform the functionsdescribed herein.

Conditional language such as, among others, “can,” “could,” “might” or“may,” unless specifically stated otherwise, are otherwise understoodwithin the context as used in general to convey that certain embodimentsinclude, while other embodiments do not include, certain features,elements and/or steps. Thus, such conditional language is not generallyintended to imply that features, elements and/or steps are in any wayrequired for one or more embodiments or that one or more embodimentsnecessarily include logic for deciding, with or without user input orprompting, whether these features, elements and/or steps are included orare to be performed in any particular embodiment.

Additionally, persons of skill in the art would be enabled to configurefunctional entities to perform the operations described herein afterreading the present disclosure. The term “configured” as used hereinwith respect to a specified operation or function refers to a system,device, component, circuit, structure, machine, etc. that is physicallyor virtually constructed, programmed and/or arranged to perform thespecified operation or function.

Disjunctive language such as the phrase “at least one of X, Y, or Z,”unless specifically stated otherwise, is otherwise understood with thecontext as used in general to present that an item, term, etc., may beeither X, Y, or Z, or any combination thereof (e.g., X, Y, and/or Z).Thus, such disjunctive language is not generally intended to, and shouldnot, imply that certain embodiments require at least one of X, at leastone of Y, or at least one of Z to each be present.

It should be emphasized that many variations and modifications may bemade to the above-described embodiments, the elements of which are to beunderstood as being among other acceptable examples. All suchmodifications and variations are intended to be included herein withinthe scope of this disclosure and protected by the following claims.

What is claimed is:
 1. A system, comprising: a top base having anopening therein, wherein the top base includes a slot to form a C-shapesuch that the top base is not completely annular; a bottom base; and arod set comprising multiple rods connected to the base, wherein each rodof the rod set comprises multiple fingers disposed in avertically-stacked relationship to each other and separated respectivelyfrom each other by respective slots, wherein each slot is configured toreceive a bevel of a wafer, and wherein each of the multiple fingerscomprises a rounded end at a furthest extension.
 2. The system of claim1, wherein each rod comprises a rear rod portion that is farthest fromthe wafer, a middle rod portion adjacent the rear rod portion, anoblique rod portion adjacent to the middle rod portion, an obliquefinger portion, and an end finger portion that comprises the multiplefingers.
 3. The system of claim 2, wherein the end finger portion isconfigured to contact the wafer.
 4. The system of claim 2, wherein theoblique finger portion extends from the rounded end along a straightline.
 5. The system of claim 4, wherein the oblique rod portion extendsfrom the oblique finger portion along the straight line.
 6. The systemof claim 2, wherein the oblique finger portion defines two oblique linesthat are from about 80 degrees to about 40 degrees apart from eachother.
 7. The system of claim 2, wherein the oblique finger portiondefines two oblique lines that are 53 degrees apart from each other. 8.The system of claim 1, further comprising a vertical thermal reactionchamber in which the rod set is configured to be disposed.
 9. A verticalwafer vessel comprising: a top base having an opening therein, whereinthe top base includes a slot to form a C-shape such that the top base isnot completely annular; a bottom base; and a rod set comprising multiplerods connected to the base, wherein each rod of the rod set comprises:multiple fingers disposed in a vertically-stacked relationship to eachother and separated respectively from each other by respective slots,wherein each slot is configured to receive a wafer, wherein each of themultiple fingers comprises a rounded end at a furthest extension, andwherein each rod comprises a rear rod portion that is farthest from thewafer, a middle rod portion adjacent the rear rod portion, an obliquerod portion adjacent to the middle rod portion, an oblique fingerportion, and an end finger portion that comprises the multiple fingers.10. The vertical wafer vessel of claim 9, wherein the bottom base alsocomprises an opening.
 11. The vertical wafer vessel of claim 9, whereinthe rod set comprises three rods.
 12. The vertical wafer vessel of claim9, wherein the rear rod portion extends from the middle rod portionalong two oblique lines that are from about 80 degrees to about 40degrees apart from each other.
 13. The vertical wafer vessel of claim 9,wherein the rear rod portion, the middle rod portion, the oblique rodportion, the oblique finger portion, and the end finger portion extendalong a central axis, and wherein the end finger portion is shorteralong the central axis than the oblique finger portion.
 14. The verticalwafer vessel of claim 9, wherein the rear rod portion, the middle rodportion, the oblique rod portion, the oblique finger portion, and theend finger portion extend along a central axis, and wherein the rear rodportion is shorter along the central axis than the oblique fingerportion.
 15. A method, comprising: inserting a wafer into a verticalwafer vessel, wherein the vertical wafer vessel comprises: a top basehaving an opening therein, wherein the top base includes a slot to forma C-shape such that the top base is not completely annular; a bottombase; and a rod set comprising multiple rods connected to the base,wherein each rod of the rod set comprises multiple fingers disposed in avertically-stacked relationship to each other and separated respectivelyfrom each other by respective slots, wherein each slot is configured toreceive a wafer bevel, and wherein each of the multiple fingerscomprises a rounded end at a furthest extension; inserting the verticalwafer vessel into a vertical thermal reaction chamber; and heating thevertical wafer vessel within the vertical thermal reaction chamber. 16.The method of claim 15, further comprising inserting the vertical wafervessel into the vertical thermal reaction chamber via a vertical motionthrough a bottom portal of the vertical thermal reaction chamber. 17.The method of claim 15, further comprising: flowing a reactant gashorizontally over a face of the wafer.
 18. The method of claim 15,further comprising: pumping a reactant gas into the vertical thermalreaction chamber while heating the vertical wafer vessel.
 19. The methodof claim 15, wherein each rod comprises a rear rod portion that isfarthest from the wafer, a middle rod portion adjacent the rear rodportion, an oblique rod portion adjacent to the middle rod portion, anoblique finger portion, and an end finger portion that comprises themultiple fingers.
 20. The method of claim 19, wherein the oblique fingerportion defines two oblique lines that are from about 80 degrees toabout 40 degrees apart from each other.